PO.ET02.05 · 实验与分子治疗

S DUAL™:一种兼具实用可制造性和增强治疗疗效的先进双特异性抗体平台

S DUAL™: An Advanced Bispecific Antibody Platform Delivering Practical Manufacturability and Enhanced Therapeutic Efficacy

海报缩略图:S DUAL™:一种兼具实用可制造性和增强治疗疗效的先进双特异性抗体平台
编号 1669 展板 28 时间 4/20 09:00–12:00 区域 Section 11 主讲 Wooseok Yang, PhD
分会场 Antibody Technologies and Platforms 1
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作者与单位 Authors & Affiliations

Jina Kim, Wooseok Yang, Kihong Kim, Hyunbum Kim, Siwon Park, Haewon Ahn, Hyebeen Hong, Hyunseung Sun, Soyeon Lee, Gwangsu Shin, Jihoon Kim, Seonkyeong Jeong, Hyunsik Lee, Sungjin Han, Joseph H. Jeong, Yeumin Kim, Brian Hosung Min

Samsung Biologics, Incheon, Korea, Republic of

摘要 Abstract

中文摘要
背景——受体酪氨酸激酶(RTK)通过配体依赖性或配体非依赖性的二聚化驱动肿瘤进展,二聚化使胞内激酶结构域相互靠近,触发自磷酸化,并招募GRB2和Shc等接头蛋白。由此产生的RAS-MAPK和PI3K-AKT级联反应维持癌细胞的增殖、存活和分化。在RTK中,HER2(ErbB2)是一种孤儿受体,优先与其他ErbB家族成员形成同源二聚体和异源二聚体。HER2过表达或截短形式(如p95HER2)的产生与侵袭性疾病及对HER2靶向疗法的耐药密切相关。 临床已获批的HER2抗体——曲妥珠单抗(trastuzumab,结构域IV)和帕妥珠单抗(pertuzumab,结构域II)——结合不同的胞外表位,但仅部分抑制HER2驱动的信号,尤其是在HER2密度高或受体发生突变/截短的肿瘤中。因此,患者常出现原发性或获得性耐药。 方法——为克服这些局限,我们采用三星生物制剂(Samsung Biologics)的S-DUAL™平台,构建了一种可同时结合HER2表位II和IV的异源二聚体双特异性抗体(BsAb)。两个Fab臂经工程化设计,通过“杵臼结构”(knob-into-hole)Fc构架实现异源二聚化,在保留天然IgG1 Fc效应功能的同时强制形成确定的Fab几何构型。 结果——在HER2阳性细胞系中,S-DUAL™使HER2自磷酸化降低约27.9%(p < 0.05),下游p-ERK1/2和p-AKT水平分别降低18.6%和25.3%,在细胞增殖方面实现了64.4%的最大抑制率(Emax)(IC50 ≈ 1.64 nM)。细胞表面结合亲和力和Fc介导的ADCC活性与参照平台相当。在HER2阳性异种移植模型中,每周静脉给药S-DUAL™相较同型对照显著减少了肿瘤生长,实现了对肿瘤体积的显著抑制且无明显毒性。 结论——通过双互补位BsAb同时阻断两个不重叠的HER2胞外结构域,能够在保留免疫效应机制的同时充分抑制配体非依赖性的HER2信号。这种“双表位、Fab几何构型调优”策略定义了下一代HER2治疗药物的新设计原则,并为克服HER2过表达、截短或突变所导致的耐药提供了潜在解决方案。
查看英文原文 English abstract
Background - Receptor tyrosine kinases (RTKs) drive tumor progression through ligand‑dependent or ligand‑independent dimerization, which brings the intracellular kinase domains into proximity, triggers autophosphorylation, and recruits adaptor proteins such as GRB2 and Shc. The resulting RAS‑MAPK and PI3K‑AKT cascades sustain cancer cell proliferation, survival and differentiation. Among RTKs, HER2 (ErbB2) is an orphan receptor that preferentially forms homodimers and heterodimers with other ErbB family members. HER2 over‑expression or the generation of truncated forms (e.g., p95HER2) is strongly associated with aggressive disease and resistance to HER2‑directed therapies. Clinically - approved HER2 antibodies-trastuzumab (domain IV) and pertuzumab (domain II)-bind distinct extracellular epitopes yet only partially inhibit HER2‑driven signaling, especially in tumors with high HER2 density or in which the receptor is mutated/truncated. Consequently, patients often develop intrinsic or acquired resistance. Approach - To overcome these limitations, we employed Samsung Biologics' S‑DUAL TM platform to generate a heterodimeric bispecific antibody (BsAb) that simultaneously engages HER2 epitopes II and IV. The two Fab arms are engineered to heterodimerize via a “knob‑into‑hole” Fc architecture, preserving native IgG1 Fc effector function while enforcing defined Fab geometry. Results - In HER2‑positive cell lines, S‑DUAL TM reduced HER2 autophosphorylation by ~27.9 % (p < 0.05) and downstream p‑ERK1/2 and p‑AKT levels by 18.6 % and 25.3 %, respectively, resulting in a maximal inhibition (Emax) of 64.4 % in cell proliferation (IC 50  ≈ 1.64 nM). Cell surface binding affinity and Fc‑mediated ADCC activity remained comparable to reference platform. In HER2‑positive xenograft models, weekly intravenous administration of S‑DUAL TM substantially reduced tumor growth relative to the isotype control, achieving a marked suppression of tumor volume without evident toxicity. Conclusion - Simultaneous blockade of two non‑overlapping HER2 extracellular domains by a biparatopic BsAb can fully suppress ligand‑independent HER2 signaling while preserving immune effector mechanisms. This “dual‑epitope, Fab‑geometry‑tuned” strategy defines a new design principle for next‑generation HER2 therapeutics and offers a potential solution to overcome resistance arising from HER2 over‑expression, truncation, or mutation.
利益披露 Disclosure
J. Kim, None.. W. Yang, None.. K. Kim, None.. H. Kim, None.. S. Park, None.. H. Ahn, None.. H. Hong, None.. H. Sun, None.. S. Lee, None.. G. Shin, None.. J. Kim, None.. S. Jeong, None.. H. Lee, None.. S. Han, None.. J. H. Jeong, None.. Y. Kim, None.. B. Min, None.

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