PO.CL08.02 · 临床研究
一个经体内验证的双机制模型解释并指导用于正常组织保护的FLASH放疗
An in vivo -validated dual-mechanism model explains and guides FLASH radiotherapy for normal-tissue sparing
作者与单位 Authors & Affiliations
摘要 Abstract
中文摘要
放疗(RT)的临床有效性常受正常组织毒性的限制。以超高剂量率(UHDR,>40 Gy/s)递送的FLASH-RT可在不影响肿瘤控制的情况下显著减少正常组织损伤——这一现象被称为FLASH效应。尽管人们对FLASH的临床转化抱有极大兴趣,但一个关键挑战依然存在,即FLASH效应背后的机制尚不明确。已发表的研究常因器官类型、终点和射束参数的差异而存在混杂因素。这种不确定性影响了优化FLASH效应所需的剂量率和剂量的选择。FLASH-RT下的正常组织保护被广泛归因于快速的物理化学反应。目前出现了两种主要假说:辐射解离氧耗竭(ROD),即瞬时O₂耗竭降低了氧增强比(OER)和DNA损伤;以及自由基-自由基复合(RRR),即升高的自由基浓度促进脂质过氧自由基的复合,从而抑制脂质过氧化(LP)和凋亡信号。然而,任何单一机制都无法完全解释实验观察结果。我们提出,FLASH保护效应可能源于ROD和RRR的协同贡献,因为二者均通过不同途径影响细胞损伤。鉴于辐照诱导的物理化学反应的复杂性,计算建模对于阐明FLASH机制至关重要。我们开发了一个整合两种机制的物理化学模型。OER加权剂量作为DNA双链断裂(D DSB)的替代指标,而导致LOOH形成的剂量则量化LP相关毒性(D LP)。整体组织毒性由损伤等效剂量(DED)表示,即D DSB与D LP之和。我们的结果表明,DED生成了一条一致的正常组织并发症概率(NTCP)曲线,该曲线在广泛的UHDR和常规剂量率(CONV)条件下,准确地捕捉了已发表的关于FLASH对急性胃肠道毒性和晚期脑毒性保护作用的数据,而单独使用剂量则无法做到。此外,脑毒性与D LP相关,支持以RRR为主导的机制,而胃肠道毒性与D DSB和D LP均相关,表明ROD和RRR存在协同贡献。我们进一步提出了等FLASH组织保护图谱,按器官类型和终点分层,界定了预期出现FLASH保护的剂量和剂量率范围。最后,我们将此模型应用于研究腹部辐照研究中报告的平均剂量率和每脉冲剂量的影响,为支配FLASH介导的组织保护的参数提供了见解。总之,该物理化学模型提供了一个统一且重要的机制框架,推进了我们对FLASH-RT保护效应的理解,并指导临床转化中剂量学参数的优化。
查看英文原文 English abstract
The clinical effectiveness of radiotherapy (RT) is often limited by normal tissue toxicity. FLASH-RT, delivered at ultra-high dose rate (UHDR, >40 Gy/s), can markedly reduce normal tissue injury without compromising tumor control-a phenomenon known as the FLASH effect. Despite considerable interest in FLASH clinical translation, a critical challenge remains, the mechanisms underlying the FLASH effect are not understood. Published studies are often confounded by differences in organ type, endpoints, and beam parameters. This uncertainty impacts the selection of dose rate and dose required to optimize FLASH effect. Normal tissue sparing under FLASH-RT is widely attributed to rapid physicochemical reactions. Two leading hypotheses have emerged: radiolytic oxygen depletion (ROD), in which transient O₂ depletion reduces the oxygen enhancement ratio (OER) and DNA damage; and radical-radical recombination (RRR), in which elevated radical concentrations promote recombination of lipid peroxyl radicals, suppressing lipid peroxidation (LP) and apoptotic signaling. However, neither mechanism alone fully explains experimental observations. We propose that the FLASH sparing effect could arise from the synergistic contributions of ROD and RRR, as both affect cellular damage through distinct pathways. Given the complexity of physicochemical reactions induced by irradiation, computational modeling is essential in elucidating FLASH mechanisms. We developed a physicochemical model that integrates both mechanisms. The OER-weighted dose serves as a surrogate for DNA double strand break (D DSB ), while the dose resulting in LOOH formation quantifies LP-related toxicity (D LP ). The overall tissue toxicity is represented by the Damage Equivalent Dose (DED) as sum of D DSB and D LP . Our results show that DED generates a consistent normal tissue complication probability (NTCP) curve that accurately captures published data on FLASH sparing of acute GI toxicity and late brain toxicity, across a wide range of UHDR and conventional dose rate (CONV) conditions, whereas dose alone fails to do so. Furthermore, the brain toxicity correlates with D LP , supporting an RRR-dominated mechanism, whereas GI toxicity correlates with both D DSB and D LP , indicating synergistic contributions of ROD and RRR. We further present iso-FLASH tissue sparing maps that delineate dose and dose-rate ranges where FLASH sparing is expected, stratified by organ type and endpoint. Finally, we apply this model to investigate the effects of average dose rate and dose per pulse reported in abdominal irradiation studies, providing insights into parameters governing FLASH-mediated tissue sparing. In sum, this physicochemical model provides an unified and important mechanistic framework that advances our understanding of FLASH-RT sparing effects and guides the optimization of dosimetric parameters for clinical translation.
利益披露 Disclosure
L. Guo, None..
A. Davis, None..
A. van der Kogel, None..
K. Wang, None.